? semiconductor components industries, llc, 2004 august, 2004 ? rev. 12 1 publication order number: bd237/d bd237 (npn), BD238 (pnp) preferred devices plastic medium power silicon npn transistor designed for use in 5.0 to 10 w audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ? dc current gain ? h fe = 40 (min) @ i c = 0.15 adc ? epoxy meets ul94, vo @ 1/8 ? esd ratings: human body model, 3b; >8000 v machine model, c; >400 v ??????????????????? ? ????????????????? ? ??????????????????? maximum ratings ???????????? ???????????? rating ???? ???? symbol ??? ??? value ??? ??? unit ???????????? ???????????? collector?emitter voltage ???? ???? v ceo ??? ??? 80 ??? ??? vdc ???????????? ???????????? collector-base voltage ???? ???? v cbo ??? ??? 100 ??? ??? vdc ???????????? ???????????? emitter-base voltage ???? ???? v ebo ??? ??? 5.0 ??? ??? vdc ???????????? ???????????? collector current ???? ???? i c ??? ??? 2.0 ??? ??? adc ???????????? ???????????? base current ???? ???? i b ??? ??? 1.0 ??? ??? adc ???????????? ???????????? total device dissipation @ t c = 25 c ???? ???? p d ??? ??? 25 ??? ??? watts ???????????? ???????????? operating and storage junction temperature range ???? ???? t j , t stg ??? ??? 55 to + 150 ??? ??? c ??????????????????? ??????????????????? thermal characteristics ???????????? ???????????? characteristic ???? ???? symbol ??? ??? max ??? ??? unit ???????????? ???????????? thermal resistance, junction?to?case ???? ???? r jc ??? ??? 5.0 ??? ??? c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. device package shipping ordering information bd237 to?225 500 units/box marking diagram x = 7 or 8 y = year ww = work week preferred devices are recommended choices for future use and best overall value. BD238 to?225 500 units/box http://onsemi.com 2.0 amperes power transistors npn silicon 80 volts 25 watts case 77?09 to?225 3 2 1 style 1: pin 1. emitter 2. collector 3. base yww bd23x
bd237 (npn), BD238 (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ????? ????? min ???? ???? max ???? ???? unit ??????????????????? ? ????????????????? ? ??????????????????? collector?emitter sustaining voltage* (i c = 0.1 adc, i b = 0) ????? ? ??? ? ????? v (br)ceo ????? ? ??? ? ????? 80 ???? ? ?? ? ???? ? ???? ? ?? ? ???? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v cb = 100 vdc, i e = 0) ????? ? ??? ? ????? i cbo ????? ? ??? ? ????? ? ???? ? ?? ? ???? 0.1 ???? ? ?? ? ???? madc ??????????????????? ??????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ????? ????? - ???? ???? 1.0 ???? ???? madc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? dc current gain (i c = 0.15 a, v ce = 2.0 v) (i c = 1.0 a, v ce = 2.0 v) ????? ? ??? ? ? ??? ? ????? h fe1 h fe2 ????? ? ??? ? ? ??? ? ????? 40 25 ???? ? ?? ? ? ?? ? ???? ? ? ???? ? ?? ? ? ?? ? ???? ? ??????????????????? ??????????????????? collector-emitter saturation voltage* (i c = 1.0 adc, i b = 0.1 adc) ????? ????? v ce(sat) ????? ????? - ???? ???? 0.6 ???? ???? vdc ??????????????????? ? ????????????????? ? ??????????????????? base?emitter on voltage* (i c = 1.0 adc, v ce = 2.0 vdc) ????? ? ??? ? ????? v be(on) ????? ? ??? ? ????? ? ???? ? ?? ? ???? 1.3 ???? ? ?? ? ???? vdc ??????????????????? ? ????????????????? ? ??????????????????? current?gain ? bandwidth product (i c = 250 madc, v ce = 10 vdc, f = 1.0 mhz) ????? ? ??? ? ????? f t ????? ? ??? ? ????? 3.0 ???? ? ?? ? ???? ? ???? ? ?? ? ???? mhz *pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. active region safe operating area 10 v ce , collector-emitter voltage (volts) 3 1 0.1 3 10 30 100 0.3 i c , collector current (amp) t j = 150 c dc 5 ms 1 100 m s 1 ms bd237 bd236 the safe operating area curves indicate i c? v ce limits below which the device will not enter secondary breakdown. collector load lines for specific circuits must fall within the applicable safe area to avoid causing a catastrophic failure. to insure operation below the maximum t j , power?temperature derating must be observed for both steady state and pulse power conditions. v ce , collector-emitter voltage (volts) figure 2. collector saturation region i b , base current (ma) 1.0 0 0.2 0.8 0.6 0.4 0.2 1.0 2.0 10 30 50 200 i c = 0.1 a 0.25 a 1.0 a 0.5 a 0.3 0.5 100 20 3.0 5.0 t j = 25 c
bd237 (npn), BD238 (pnp) http://onsemi.com 3 1000 figure 3. current gain i c , collector current (ma) 10 100 t j = + 150 c t j = - 55 c v ce = 2.0 v h fe , dc current gain (normalized) 700 500 300 200 70 50 30 20 t j = + 25 c 3.0 5.0 10 20 30 50 2000 2.0 100 200 1000 300 500 figure 4. aono voltages 0 1.5 3.0 5.0 10 20 30 50 2000 2.0 100 200 1000 300 500 1.2 0.9 0.6 0.3 i c , collector current (ma) t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 voltage (volts) v be @ v ce = 2.0 v figure 5. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), normalized effective transient thermal resistance 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000 500 q jc (t) = r(t) q jc q jc = 4.16 c/w max q jc = 3.5 c/w typ d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse d = 0.2 d = 0.1 d = 0.05 d = 0.01
bd237 (npn), BD238 (pnp) http://onsemi.com 4 package dimensions to?225 case 77?09 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 077-01 thru -08 obsolete, new standard 077-09. ?b? ?a? m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bd237/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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